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PSHI 512F45A

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3-level HV-IGBT Drivers [18]
IGBT driver [29]
3-level IGBT Driver Core [8]
ALCON capacitance [3]
E series IGBT driver core [13]
IGBT driver circuit [1]
High Power IGBT Driver [7]
SVG / SVC [1]
application Wind power generation、Inverter、Converter、Welding machine &cutting、Induction heating、Trac [1]
HV-IGBT drivers [34]
IGBT driver, thyristor , diode [2]
Parallel Resonant Driver [1]
Plug & Play IGBT Driver [5]
Thyristor Driver [2]

BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.

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PSHI 512F45A

Place of Origin : China

Brand Name : power-sem

Model Number : PSHI 512F45A

MOQ : 1 pcs

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● ASIC single IGBT driver
● Suitable for multi-level all 4500V HV-IGBTs
● Short circuit and over current protection by VCEsat monitoring
● Supply VGE undervoltage protection (>-7.5V,<+12.5V)
● Error “soft turn-off”
● Dynamic “soft turn-off”+active clamping
● Internal isolated DC/DC power supply
● Isolation voltage 10kVac ● 1min
● ±40A peak current output
● IGBT gate drive voltage +15V/-10V
● 500ns signal conversion time
● 30ns error signal feedback time
● 400ns narrow pulse inhibit
● Max. working frequency 8kHz
● Fiber-optic interface
● IGBT turn on/off status indication
● Clearance distance from primary side to secondary side is 32mm

PSHI 512F45A

Absolute Maximum Ratings(Ta=25℃)

Symbol	Term	Values	Unit
V_{S MAX.}	Max. supply voltage primary	+16	V
I_{S MAX.}	Max. supply current primary	350	mA
P_DC/DC	Total power of DC/DC isolation power output	5	W
I_O	Max. logic signal output current	10	mA
I_outAV	Output average current per channel	140	mA
I_outPEAK	Output peak current per channel	±40	A
V_CES	IGBT collector-emitter voltage	4500	V
V_{isol IO}	Isolation voltage IN-OUT(1 minute. AC)	10	kV
R_{Gon/off min}	Minimal R_gon/R_goff	0.65	Ω
Q_out/pulse	Minimal charge per pulse	±60	μC
dv/dt	Rate of rise and fall of voltage	75	kV/μs
f_{SW max}	Max. working frequency	8	kHz
T_op	Operating temperature	-45...+85	℃
T_stg.	Storage temperature	-45...+85	℃

Electrical Characteristics *(Ta=25℃)

Symbol	Term	Parameter				Unit
Symbol	Term	Min.	Typ.	Max.	Rec.	Unit
V_S	Supply voltage primary	14.5	15	15.5	15	V
I_S	No-load current primary f_SW=0 f_SW=8kHz		110 125			mA
V_G(on)	Turn-on gate voltage		+15			V
V_G(off)	Turn-off gate voltage		-10			V
V_G(onTH)	IGBT turn-on threshold voltage		+13.5			V
V_G(offTH)	IGBT turn-off threshold voltage		-4.5			V
t_d(on)IO	IN-OUT turn-on delay time		500			ns
t_d(off)IO	IN-OUT turn-off delay time		500			ns
t_d(err)	Error signal return delay time V_CEerror happen-error signal output		30			ns
t_md	Narrow pulse restrained		400			ns
t_pReset	error automatic reset time	30				μs
t_p(err)	Error signal pulse width		30			μs
V_CEstat	Reference voltage for V_CEmonitoring	20	55	60	55	V
C_PS	Primary to secondary capacitance		8			pf

*Electrical Characteristics do not contain fiber-optic link and photoelectric conversion parameters(HFBR-2521/HFBR-1521)

● 3-level and multi-level applications
● Traction
● SVG
● Medium-voltage converter
● Mine inverter
● Wind-power converter
● Smart power grids
● Active power filter

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PSHI 512F45A

PSHI 512F45A

IGBT driver

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